Activation of luminescence in polycrystalline silicon thin films by ultrasound treatment

被引：19

作者：

Koshka, J ^{[1
]}

Ostapenko, S ^{[1
]}

Ruf, T ^{[1
]}

Zhang, JM ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-70569 STUTTGART, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 17期

关键词：

D O I：

10.1063/1.117731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A dramatic increase of infrared photoluminescence (PL) intensity by a factor of 2 orders of magnitude is observed after a few minutes at 250 degrees C of ultrasound treatment (UST) applied to polycrystalline silicon thin films on glass substrates. In films obtained by solid-phase crystallization of amorphous silicon at 550 degrees C, UST enhances the PL band intensity at 0.7 eV, and also activates a new luminescence maximum at about 0.9 eV. We prove that the 0.9 eV PL band is related to the amorphous fraction of poly-Si films. Due to similarities in spectral shape and temperature behavior, this UST activated luminescence is attributed to a ''defect'' PL band previously observed in hydrogenated amorphous Si. This conclusion is confirmed by using a set of films with controlled fractions of the amorphous to crystalline phase. A mechanism of ultrasound stimulated hydrogen detrapping followed by hydrogen diffusion and passivation of nonradiative centers (e.g., dangling bonds) in polycrystalline and amorphous Si films is discussed. (C) 1996 American Institute of Physics.

引用

页码：2537 / 2539

页数：3

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