Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy

被引：39

作者：

OShea, JJ ^{[1
]}

Reaves, CM ^{[1
]}

DenBaars, SP ^{[1
]}

Chin, MA ^{[1
]}

Narayanamurti, V ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 20期

关键词：

D O I：

10.1063/1.116826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ordered-GaInP/GaAs heterostructures have been studied using ballistic-electron-emission microscopy (BEEM). The GaInP/GaAs conduction band offset was found to decrease with increasing order. Samples were grown simultaneously on different misoriented substrates to vary the degree of order in the GaInP. Concurrent scanning tunneling microscopy and BEEM images show ridge structures in the topography and contrast in the BEEM current that may correspond to ordered domains in the GaInP, Room temperature conduction band offsets of 137 and 86 meV were measured using BEEM spectroscopy for GaInP with 2 K band gaps of 1.97 and 1.89 eV,respectively. (C) 1996 American Institute of Physics.

引用

页码：3022 / 3024

页数：3

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