Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11(2)over-bar2} microfacets -: art. no. 231901

被引：72

作者：

Nishizuka, K ^{[1
]}

Funato, M

Kawakami, Y

Narukawa, Y

Mukai, T

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 23期

关键词：

D O I：

10.1063/1.2136226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rainbow color luminescence from InxGa1-xN single quantum wells (SQWs) is achieved and almost covers the entire visible range when the layers are fabricated on {11 (2) over bar2) facets with a few micron-width using a regrowth technique on striped GaN templates. These facets are tilted 56 with respect to the (0001) facets and border the (0001) and {11 (2) over bar0} facets. The emission wavelength on the {11 (2) over bar2} facets is redshifted from the {11 (2) over bar0} side to (0001) side due to the variations of the In composition, which leads to the color contrast with the rainbow geometry. The temperature dependence of the photoluminescence intensity shows that the internal quantum efficiency at room temperature is 33% due to the very small internal electric fields and a small threading dislocation density compared to that in conventional (0001) InxGa1-xN SQWs. Since the emission efficiency does not show a noticeable emission wavelength dependence, this type of structure has potential as light-emitting devices with multiwavelengths that perform numerous color controllability such as pastel and white colors. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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