Epitaxial Bi/GaAs(111) diodes via electrodeposition

被引：16

作者：

Bao, ZL ^{[1
]}

Kavanagh, KL ^{[1
]}

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 02期

基金：

加拿大自然科学与工程研究理事会; 加拿大创新基金会;

关键词：

D O I：

10.1063/1.2161849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth films formed by electrodeposition on n-GaAs (111) at 70 degrees C are found to be single crystalline, (0001) oriented, with trigonal surface morphologies typical of high quality single crystals. Diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.77 +/- 0.02 eV (n=1.07). A necessary requirement for single crystalline growth is the presence of ammonium sulfate in the electrolyte.

引用

页码：1 / 3

页数：3

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