Epitaxial Bi/GaAs(111) diodes via electrodeposition

被引:16
作者
Bao, ZL [1 ]
Kavanagh, KL [1 ]
机构
[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
基金
加拿大自然科学与工程研究理事会; 加拿大创新基金会;
关键词
D O I
10.1063/1.2161849
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bismuth films formed by electrodeposition on n-GaAs (111) at 70 degrees C are found to be single crystalline, (0001) oriented, with trigonal surface morphologies typical of high quality single crystals. Diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.77 +/- 0.02 eV (n=1.07). A necessary requirement for single crystalline growth is the presence of ammonium sulfate in the electrolyte.
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页码:1 / 3
页数:3
相关论文
共 17 条
[11]   Electrochemical formation of GaAs/Bi Schottky barriers [J].
Vereecken, PM ;
Searson, PC .
APPLIED PHYSICS LETTERS, 1999, 75 (20) :3135-3137
[12]   Magnetotransport properties of bismuth films on p-GaAs [J].
Vereecken, PM ;
Sun, L ;
Searson, PC ;
Tanase, M ;
Reich, DH ;
Chien, CL .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) :6529-6535
[13]   Electrodeposition of bismuth thin films on n-GaAs (110) -: art. no. 121916 [J].
Vereecken, PM ;
Rodbell, K ;
Ji, CX ;
Searson, PC .
APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3
[14]   ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT [J].
WALDROP, JR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :445-448
[15]  
WARREN BE, 1966, XRAY DIFFRACTION, P253
[16]   Shubnikov-de Haas oscillations in electrodeposited single-crystal bismuth films [J].
Yang, FY ;
Liu, K ;
Hong, KM ;
Reich, DH ;
Searson, PC ;
Chien, CL ;
Leprince-Wang, Y ;
Kui, YZ ;
Han, K .
PHYSICAL REVIEW B, 2000, 61 (10) :6631-6636
[17]   Large magnetoresistance and finite-size effects in electrodeposited single-crystal Bi thin films [J].
Yang, FY ;
Liu, K ;
Chien, CL ;
Searson, PC .
PHYSICAL REVIEW LETTERS, 1999, 82 (16) :3328-3331