Onset of blistering in hydrogen-implanted silicon

被引：62

作者：

Huang, LJ ^{[1
]}

Tong, QY

Chao, YL

Lee, TH

Martini, T

Gösele, U

机构：

[1] Duke Univ, Sch Engn, Durham, NC 27708 USA

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 07期

关键词：

D O I：

10.1063/1.123430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The onset of surface blistering in hydrogen-implanted single crystalline silicon was studied. A combination of atomic force microscopy and optical measurements shows that hydrogen-containing platelets grow laterally below silicon surface until they suddenly pop up as surface blisters due to the internal hydrogen pressure after a critical size has been reached. Experimentally and theoretically, the critical size of the onset blisters was found to increase with increasing implantation depth or top layer thickness. (C) 1999 American Institute of Physics. [S0003-6951(99)01207-3].

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页码：982 / 984

页数：3

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