A transferred-substrate HBT wide-band differential amplifier to 50 GHz

被引：4

作者：

Agarwal, B ^{[1
]}

Lee, Q ^{[1
]}

Pullela, R ^{[1
]}

Mensa, D ^{[1
]}

Guthrie, J ^{[1
]}

Rodwell, MJW ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 07期

关键词：

broad band; differential; HBT; InP; transferred-substrate;

D O I：

10.1109/75.701387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Differential amplifiers are used in automatic gain control amplifiers and limiting amplifiers in fiber-optic receivers. Here we present a differential amplifier fabricated in the transferred-substrate heterojunction bipolar transistor (HBT) integrated circuit technology. The amplifier has a gain of 11 dB and the 3-dB bandwidth is greater than 50 GHz. Two gain stages with de interstage coupling are used. Biasing is through active current mirrors and a single negative power supply. A bandwidth of 50 GHz is the highest bandwidth ever reported for a broad-band differential amplifier in any technology.

引用

页码：263 / 265

页数：3

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