Optimization of p-doping in GaAs photon-recycling light-emitting diodes operated at low temperature

被引：9

作者：

Dupont, E ^{[1
]}

Gao, M ^{[1
]}

Buchanan, M ^{[1
]}

Wasilewski, ZR ^{[1
]}

Liu, HC ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 05期

关键词：

D O I：

10.1088/0268-1242/16/5/101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The external efficiency of AlGaAs/GaAs photon-recycling light-emitting diodes operated at low temperature (80 K) and low current densities has been maximized by adjusting the beryllium doping concentration ill the active region. A concentration of 8 x 10(16) cm(-3) was found close to the optimum: below this value the bimolecular recombination appears and above impurity-related transitions penalize the efficiency of photon-recycling effects.

引用

页码：L21 / L23

页数：3

共 7 条

[1] Efficient light emitting diodes by photon recycling and their application in pixelless infrared imaging devices
Dupont, E
Chiu, S
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) : 1023 - 1028
[2] Pixelless infrared imaging devices based on the integration of n-type quantum well infrared photodetector with near-infrared light emitting diode
Dupont, E
Liu, HC
Buchanan, M
Wasilewski, ZR
St-Germain, D
Chevrette, P
[J]. PHOTODETECTORS: MATERIALS AND DEVICES IV, 1999, 3629 : 155 - 162
[3] Pixel-less infrared imaging based on the integration of an n-type quantum-well infrared photodetector with a light-emitting diode
Dupont, E
Liu, HC
Buchanan, M
Wasilewski, ZR
St-Germain, D
Chevrette, P
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (04) : 563 - 565
[4] Efficient GaAs light-emitting diodes by photon recycling
Dupont, E
Liu, HC
Buchanan, M
Chiu, S
Gao, M
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (01) : 4 - 6
[5] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS
NELSON, RJ
SOBERS, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6103 - 6108
[6] ULTRAHIGH SPONTANEOUS EMISSION QUANTUM EFFICIENCY, 99.7-PERCENT INTERNALLY AND 72-PERCENT EXTERNALLY, FROM ALGAAS/GAAS/ALGAAS DOUBLE HETEROSTRUCTURES
SCHNITZER, I
YABLONOVITCH, E
CANEAU, C
GMITTER, TJ
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (02) : 131 - 133
[7] STRRANKA FM, 1995, J ELECT MAT, V24, P1407

← 1 →