Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current-voltage and capacitance-voltage measurements

被引：16

作者：

Cai, C ^{[1
]}

Nathan, MI

Lim, TH

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.123102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al/u:GaAs/n:Ga0.52In0.48P inverted-structure (GaAs on top) Schottky diodes on n(+) GaAs (001) substrates have been grown by gas source molecular beam epitaxy with several GaAs thicknesses from 10 to 100 nm. The barrier height determined by the capacitance versus voltage method is substantially higher than the barrier height determined by the current versus voltage method. These results suggest that there is a negative interface charge 6-8 X 10(11)/cm(-2) at the GaAs/Ga0.52In0.48P interface, which is opposite in sign to the interface charge at the normal structure of the Ga0.52In0.48P/GaAs heterojunction reported previously. (C) 1999 American Institute of Physics. [S0003-6951(99)01505-3].

引用

页码：720 / 722

页数：3

共 13 条

[1] CONDUCTION-BAND AND VALENCE-BAND OFFSETS IN GAAS/GA0.51IN0.49P SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BISWAS, D ;

DEBBAR, N ;

BHATTACHARYA, P ;

RAZEGHI, M ;

DEFOUR, M ;

OMNES, F .

APPLIED PHYSICS LETTERS, 1990, 56 (09) :833-835

[2] UNPINNED GAAS SCHOTTKY BARRIERS WITH AN EPITAXIAL SILICON LAYER [J].

COSTA, JC ;

MILLER, TJ ;

WILLIAMSON, F ;

NATHAN, MI .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) :2173-2184

[3] INTERNAL PHOTOEMISSION AND ENERGY-BAND OFFSETS IN GAAS-GAINP P-I-N HETEROJUNCTION PHOTODIODES [J].

HAASE, MA ;

HAFICH, MJ ;

ROBINSON, GY .

APPLIED PHYSICS LETTERS, 1991, 58 (06) :616-618

[4] Aluminum free GaInP/GaAs quantum well infrared photodetectors for long wavelength detection [J].

Jelen, C ;

Slivken, S ;

Hoff, J ;

Razeghi, M ;

Brown, GJ .

APPLIED PHYSICS LETTERS, 1997, 70 (03) :360-362

[5] GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH AND DEVICE APPLICATIONS IN IN0.5GA0.5P AND IN0.5AL0.5P HETEROSTRUCTURES [J].

KUO, JM .

THIN SOLID FILMS, 1993, 231 (1-2) :158-172

[6] THE EFFECT OF GROWTH PAUSE ON THE COMPOSITION OF INGAP/GAAS HETEROINTERFACES [J].

LEE, HY ;

HAFICH, MJ ;

ROBINSON, GY .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :244-248

[7] Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current-voltage and capacitance-voltage measurements [J].

Lim, TH ;

Miller, TJ ;

Williamson, F ;

Nathan, MI .

APPLIED PHYSICS LETTERS, 1996, 69 (11) :1599-1601

[8] HIGH-BREAKDOWN-VOLTAGE GA0.51IN0.49P/GAAS I-HEMT AND I(2)HEMT WITH A GAINP PASSIVATION LAYER GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

LU, SS ;

HUANG, CL ;

SUN, TP .

SOLID-STATE ELECTRONICS, 1995, 38 (01) :25-29

[9] DC CHARACTERIZATION OF THE GA0.51IN0.49P/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTOR [J].

LU, SS ;

WU, CC ;

HUANG, CC ;

WILLIAMSON, F ;

NATHAN, MI .

APPLIED PHYSICS LETTERS, 1992, 60 (17) :2138-2140

[10] AL/SI/ALGAAS/GAAS SCHOTTKY BARRIERS BY MOLECULAR-BEAM EPITAXY [J].

MILLER, TJ ;

NATHAN, MI .

APPLIED PHYSICS LETTERS, 1992, 61 (19) :2332-2334

← 1 2 →