High aspect ratio micromachining by synchrotron radiation direct photo-etching

We have carried out micromachining of Teflon-polymers such as PTFE, PFA and FEP as well as optical crystal such as NaCl and LiF by synchrotron radiation direct (without any chemicals) photo-etching and succeeded in creating microstructures with very high aspect ratios. The maximum aspect-ratio achieved was 50 and the maximum processing depth was 1500 microns. Dependence of the etching rate on the synchrotron beam current and on the substrate temperature was studied. Based on the study, we could use only x-rays from the synchrotron radiation so as to apply x-ray lithography technology (such as using an x-ray mask and processing in He atmosphere) to our process. A rise in the sample temperature results in significant enhancement of the etching rate. The etching rate measured was on the order of a few 100 mu m/min. So that this process is much faster than hard x-ray deep lithography for the processing of more than 100 mu m deep microstructures.