Disordering of the ZnCdSe single quantum well structure by Cd diffusion

被引：13

作者：

Momose, M

Taike, A

Kawata, M

Gotoh, J

Nakatsuka, S

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 23期

关键词：

D O I：

10.1063/1.117210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of annealing on a ZnCdSe single quantum well (SQW) structure with ZnCdSSe/ZnSSe superlattice optical guiding layers are investigated. X-ray diffraction and photoluminescence (PL) measurements showed disordering of a ZnCdSSe/ZnSSe superlattice after annealing at about 500 degrees C. The PL peak energy of the SQW shifted to the higher energy side, and the linewidth narrowed in the sample annealed at 300 degrees C. Cadmium diffusion was confirmed by secondary ion mass spectrometry. We found that the disordering of the ZnCdSSe/ZnSSe superlattice and the changes in the emissions from the SQW were due to the Cd diffusion. (C) 1996 American Institute of Physics.

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收藏

页码：3572 / 3574

页数：3

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