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DISORDERING OF CDZNSE/ZNSE STRAINED-LAYER SUPERLATTICES BY ION-IMPLANTATION

被引：8
作者：
YOKOGAWA, T
MERZ, J
LUO, H
FURDYNA, J
LAU, S
KUTTLER, M
BIMBERG, D
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
[2] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556
[3] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093
[4] TECH UNIV BERLIN,BERLIN,GERMANY
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期
关键词：
II-VI COMPOUND; SUPERLATTICE; DISORDERING; ION IMPLANTATION; ANNEALING; X-RAY DIFFRACTION; PHOTOLUMINESCENCE;
D O I：
10.1143/JJAP.34.1159
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first confirmation of disordering of CdZnSe/ZnSe strained-layer superlattices (SLSs) by ion implantation. Ne was used for the ion species. Both the as-grown sample and the sample annealed without ion implantation showed periodic depth profiles in secondary ion mass spectrometry (SIMS) analyses and several orders of well-resolved double-crystal X-ray satellite peaks due to SLS periodic structure. However, the SIMS periodic profiles and the satellite peaks completely disappeared in the Ne-implanted sample, indicating that the SLS structure was disordered by the ion-implantation and not caused by the annealing process.
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收藏
页码：1159 / 1161
页数：3
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