IMPURITY-INDUCED DISORDERING OF CDZNSE/ZNSE STRAINED-LAYER SUPERLATTICES BY GERMANIUM DIFFUSION

被引：4

作者：

YOKOGAWA, T ^{[1
]}

FLOYD, PD ^{[1
]}

HASHEMI, MM ^{[1
]}

MERZ, JL ^{[1
]}

LUO, H ^{[1
]}

FURDYNA, JK ^{[1
]}

机构：

[1] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first confirmation of disordering of CdZnSe/ZnSe strained layer superlattices (SLSs) by Ge diffusion. Both the as-grown sample and the sample annealed without a Ge layer showed several orders of well-resolved double crystal x-ray satellite peaks due to SLS periodic structure. However, the satellite peaks completely disappeared in the Ge-diffused sample, indicating that the SLS structure was disordered by the Ge diffusion and not caused by the annealing process. PL measurements at 1.4 K of both the as-grown and the annealed samples without Ge diffusion show identical, sharp excitonic emission around 483 nm. After Ge diffusion, the PL peaks shift to higher energy confirming the layer disordering of the SLS.

引用

页码：3488 / 3490

页数：3

共 10 条

[1]

DEPPEDG, 1988, J APPL PHYS, V64, pR93

[2] BLUE-GREEN LASER-DIODES [J].