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STM study of dynamical effects on submonolayer phases of Pb/Si(111)

被引：15
作者：
Custance, O
Brihuega, I
Veuillen, JY
Gómez-Rodríguez, JM
Baró, AM
机构：
[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[2] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
来源：
SURFACE SCIENCE | 2001年 / 482卷
关键词：
scanning tunneling microscopy; epitaxy; growth; surface structure; morphology; roughness; and topography; silicon; lead;
D O I：
10.1016/S0039-6028(01)00776-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
By means of STM we have been able to analyze in real time the complex dynamical processes that take place at room temperature in the interface between Pb/Si(111)-(1 x 1) and 1/3 ML alpha -Pb/Si(111)-(root3 x root3)R30 degrees reconstructions. We have found that the border between these reconstructions is highly mobile, showing a fluctuating character between 1 x 1 regions and defect free areas presenting the alpha-(root3 x root3)R30 degrees reconstruction. These fluctuations involve a large number of atoms in cooperative movement as well as atom recombination in the border of the two reconstructions. The intrinsic character of these effects versus possible STM influence has been analyzed and discussed, and a field-induced diffusion mechanism is tentatively suggested. (C) 2001 Elsevier Science B.V. All rights reserved,
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页码：878 / 885
页数：8
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