Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

被引：78

作者：

Park, SH ^{[1
]}

Kim, J

Jeon, H

Sakong, T

Lee, SN

Chae, S

Park, Y

Jeong, CH

Yeom, GY

Cho, YH

机构：

[1] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151747, South Korea

[3] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

[4] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea

[5] Chungbuk Natl Univ, Dept Phys, Chonju 361763, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.1611643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in an extended cavity structure. A VCSEL device had a long extended cavity, which consisted of a sapphire substrate as well as a GaN epilayer and had an integrated microlens on one side. High-reflection dielectric mirrors were deposited on both sides of the laser cavity. The laser was optically pumped and operated at room temperature. The VCSEL device lased at a low threshold excitation intensity of 160 kW/cm(2). In contrast to a conventional microcavity-VCSEL structure, the VCSEL operated in multiple longitudinal modes with mode spacing consistent with its physical thickness. (C) 2003 American Institute of Physics.

引用

页码：2121 / 2123

页数：3

共 10 条

[1] Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature - Comment [J].