An envelope function description of the quantum well formed in AlxGa1-xAsySb1-y/InAs/AlxGa1-xAsySb1-y heterostructures

被引：2

作者：

Anwar, AFM ^{[1
]}

Webster, RT ^{[1
]}

机构：

[1] ROME LAB, ELECTROMAGNET & RELIABIL DIRECTORATE, BEDFORD, MA 01731 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.363812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schrodinger and Poisson equations are solved self-consistently to calculate the quantum mechanical properties of AlGaAsSb/InAs/AlGaAsSb single quantum wells formed in high electron mobility transistors. The two dimensional electron gas (2DEG) distribution is calculated and shows excellent confinement both at room temperature and at 77 K. The variation of the average distance of the electron cloud, from the first heterointerface, with the 2DEG concentration is a strong function of the quantum well. (QW) width. A minimum 2DEG concentration threshold, dictated by the QW width and the unintentional doping level of the substrate, exists at room temperature. This effect may prohibit the pinching-off of the channel at room temperature, especially for wide QWs. (C) 1996 American Institute of Physics.

引用

页码：6827 / 6830

页数：4

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