Characterization of growth and crystallization processes in CoFeB/MgO/CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction

被引：159

作者：

Yuasa, S ^{[1
]}

Suzuki, Y

Katayama, T

Ando, K

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期

关键词：

D O I：

10.1063/1.2140612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We performed reflective high-energy electron diffraction observations to investigate the growth and crystallization processes of Co60Fe20B20/MgO/Co60Fe20B20 magnetic tunnel junction structures. A MgO layer grown on an amorphous CoFeB layer has an amorphous structure up to the MgO thickness (t(MgO)) of 4 monoatomic layers (ML) and begins to crystallize with (001) preferred orientation when t(MgO)>= 5 ML. By annealing, an amorphous CoFeB layer grown on MgO(001) crystallizes in a body-centered-cubic structure with (001) orientation because MgO(001) acts as a template to crystallize CoFeB. The results give important information for understanding the mechanism of giant tunneling magnetoresistance effect in CoFeB/MgO/CoFeB MTJs.

引用

页码：1 / 3

页数：3

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