Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

Elemental source molecular beam epitaxy was used to grow InGaNAs quantum well samples, edge-emitting laser diodes, and vertical-cavity laser diodes on GaAs substrates. The quantum well samples exhibited an as-grown room temperature photoluminescence Deaf; beyond 1310 nm which both increased dramatically in intensity and blueshifted with thermal annealing. Edge emitting laser diodes had threshold current densities as low as 450 and 750 A/cm(2) for single and triple quantum well active regions, respectively, and emitted light at 1210-1250 nm. The vertical cavity laser diodes emitted light at 1200 nm and had threshold current densities of 3 kA/cm(2) and efficiencies of 0.066 W/A. (C) 2000 American Vacuum Society. [S0734-211X(00)09603-7].