Quantum Hall effect in polar oxide heterostructures

被引：503

作者：

Tsukazaki, A.

Ohtomo, A. ^{[1
]}

Kita, T.

Ohno, Y.

Ohno, H.

Kawasaki, M.

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi 3320012, Japan

[3] Japan Sci & Technol Agcy, ERATO Semicond Spintron Project, Sendai, Miyagi 9800023, Japan

[4] Tohoku Univ, Lab Nanoelect & Spintron, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

[5] Japan Sci & Technol Agcy, CREST, Kawaguchi 3320012, Japan

来源：

SCIENCE | 2007年 / 315卷 / 5817期

关键词：

D O I：

10.1126/science.1137430

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/MgxZn1-xO heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 x 10(12) to 3.7 x 10(12) per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 +/- 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.

引用

页码：1388 / 1391

页数：4

共 25 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].