Patterning of Flexible Transparent Thin-Film Transistors with Solution-Processed ZnO Using the Binary Solvent Mixture

被引:53
作者
Kim, Kyongjun [1 ]
Park, Siyun [1 ]
Seon, Jong-Baek [1 ,3 ]
Lim, Keon-Hee [1 ]
Char, Kookheon [2 ]
Shin, Kyusoon [4 ]
Kim, Youn Sang [1 ,5 ]
机构
[1] Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Dept Nano Sci & Technol, Seoul 151744, South Korea
[2] Seoul Natl Univ, Intelligent Hybrids Res Ctr, Sch Chem & Biol Engn, WCU Program Chem Convergence Energy, Seoul 151744, South Korea
[3] Samsung Adv Inst Technol, Display Lab, Yongin 446712, Gyeonggi Do, South Korea
[4] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151744, South Korea
[5] Adv Inst Convergence Technol, Suwon 443270, Gyeonggi Do, South Korea
关键词
TEMPERATURE; GEL;
D O I
10.1002/adfm.201100323
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Flexible transparent thin-film transistors (TTFTs) have emerged as next-generation transistors because of their applicability in transparent electronic devices. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. Since the patterning that prevents current leakage and crosstalk noise is essential to fabricate TTFTs, the need for sophisticated patterning methods is critical. In patterning solution-processed ZnO thin films, several points require careful consideration. In general, as these thin films have a porous structure, conventional patterning based on photolithography causes loss of film performance. In addition, as controlling the drying process is very subtle and cumbersome, it is difficult to fabricate ZnO semiconductor films with robust fidelity through selective printing or patterning. Therefore, we have developed a simple selective patterning method using a substrate pre-patterned through bond breakage of poly(methyl methacrylate) (PMMA), as well as a new developing method using a toluene-methanol mixture as a binary solvent mixture.
引用
收藏
页码:3546 / 3553
页数:8
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