Patterning of Solution-Processed Semiconducting Polymers in High-Mobility Thin-Film Transistors by Physical Delamination

被引：32

作者：

Chang, Jui-Fen ^{[1
]}

Sirringhaus, Henning ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 24期

关键词：

PENTACENE;

D O I：

10.1002/adma.200803794

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Patterning of high-mobility semiconducting polymer thin films is essential to prevent undesirable crosstalk in realization of integrated circuits. We present here two simple selective physical delamination methods that allow clean and high-resolution patterning of semiconducting polymers for thin-film transistors, leading to a significant reduction in OFF current while retaining the high field-effect mobilities of the unpatterned polymer films.

引用

页码：2530 / +

页数：7

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