Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

被引：519

作者：

Jeong, Sunho ^{[1
,2
]}

Ha, Young-Geun ^{[1
,2
]}

Moon, Jooho ^{[3
]}

Facchetti, Antonio ^{[1
,2
]}

Marks, Tobin J. ^{[1
,2
]}

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 12期

关键词：

HIGH-PERFORMANCE; SEMICONDUCTORS; FABRICATION; TRANSPORT;

D O I：

10.1002/adma.200902450

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ga doping in indium zinc oxide (IZO)-based amorphous-oxide semiconductors (AOSs) promotes the formation of oxide-lattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, low-temperature-annealed AOSs.

引用

页码：1346 / +

页数：6

共 40 条

[1] High-performance, spin-coated zinc tin oxide thin-film transistors [J].

Chang, Y. -J. ;

Lee, D. -H. ;

Herman, G. S. ;

Chang, C. -H. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (05) :H135-H138

[2] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[3] Solution-processed indium-zinc oxide transparent thin-film transistors [J].

Choi, Chaun Gi ;

Seo, Seok-Jun ;

Bae, Byeong-Soo .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (01) :H7-H9

[4] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[5] X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS [J].

FAN, JCC ;

GOODENOUGH, JB .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3524-3531

[6] High mobility indium free amorphous oxide thin film transistors [J].

Fortunato, Elvira M. C. ;

Pereira, Lus M. N. ;

Barquinha, Pedro M. C. ;

do Rego, Ana M. Botelho ;

Goncalves, Goncalo ;

Vila, Anna ;

Morante, Juan R. ;

Martins, Rodrigo F. P. .

APPLIED PHYSICS LETTERS, 2008, 92 (22)

[7] Stability of transparent zinc tin oxide transistors under bias stress [J].

Goerrn, P. ;

Hoelzer, P. ;

Riedl, T. ;

Kowalsky, W. ;

Wang, J. ;

Weimann, T. ;

Hinze, P. ;

Kipp, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[8] Factors controlling electron transport properties in transparent amorphous oxide semiconductors [J].

Hosono, Hideo ;

Nomura, Kenji ;

Ogo, Youichi ;

Uruga, Tomoya ;

Kamiya, Toshio .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) :2796-2800

[9] Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application [J].

Hosono, Hideo .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :851-858

[10] STRUCTURES AND PROPERTIES OF ELECTRON-BEAM-EVAPORATED INDIUM TIN OXIDE-FILMS AS STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND WORK-FUNCTION MEASUREMENTS [J].

ISHIDA, T ;

KOBAYASHI, H ;

NAKATO, Y .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) :4344-4350

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