Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

被引：519

作者：

Jeong, Sunho ^{[1
,2
]}

Ha, Young-Geun ^{[1
,2
]}

Moon, Jooho ^{[3
]}

Facchetti, Antonio ^{[1
,2
]}

Marks, Tobin J. ^{[1
,2
]}

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 12期

关键词：

HIGH-PERFORMANCE; SEMICONDUCTORS; FABRICATION; TRANSPORT;

D O I：

10.1002/adma.200902450

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ga doping in indium zinc oxide (IZO)-based amorphous-oxide semiconductors (AOSs) promotes the formation of oxide-lattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, low-temperature-annealed AOSs.

引用

页码：1346 / +

页数：6

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