Relationship between non-localized tail states and carrier transport in amorphous oxide semiconductor, In-Ga-Zn-O

被引：34

作者：

Nomura, K. ^{[1
]}

Kamiya, T. ^{[1
,2
]}

Ohta, H. ^{[1
]}

Shimizu, K. ^{[3
]}

Hirano, M. ^{[1
]}

Hosono, H. ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Japan Sci & Technol Agcy, Frontier Collaborat Res Ctr, ERATO SORST,Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Keio Univ, Kokoku Ku, Yokohama, Kanagawa 2238521, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 08期

关键词：

D O I：

10.1002/pssa.200778936

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1910 / 1914

页数：5

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