Synthesis, characterization, and transistor response of semiconducting silole polymers with substantial hole mobility and air stability. Experiment and theory

被引:329
作者
Lu, Gang
Usta, Hakan
Risko, Chad
Wang, Lian
Facchetti, Antonio
Ratner, Mark A.
Marks, Tobin J.
机构
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
关键词
D O I
10.1021/ja800424m
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Realizing p-channel semiconducting polymers with good hole mobility, solution processibility, and air stability is an important step forward in the chemical manipulation of charge transport in polymeric solids and in the development of low-cost printed electronics. We report here the synthesis and full characterization of the dithienosilole- and dibenzosilole-based homopolymers, poly(4,4-di-n-hexyldithienosilole) (TS6) and poly(9,9-di-n-octyldibenzosilole) (BS8), and their mono- and bithiophene copolymers,, poly(4,4-di-n-hexyldithienosilole-alt-(bi)thiophene) (TS6T1,TS6T2) and poly(9,9-di-n-octyldibenzosilole-alt(bi)thiophene) (BS8T1,BS8T2), and examine in detail the consequences of introducing dithienosilole and dibenzosilole cores into a thiophene polymer backbone. We demonstrate air-stable thin-film transistors (TFTs) fabricated under ambient conditions having hole mobilities as large as 0.08 cm(2)/V.s, low turn-on voltages, and current on/off ratios > 10(6). Additionally, unencapsulated TFTs fabricated under ambient conditions are air-stable, an important advance over regioregular poly(3-hexylthiophene) (P3HT)-based devices. Density functional theory calculations provide detailed insight into the polymer physicochemical and charge transport characteristics. A direct correlation between the hole injection barrier and both TFT turn-on voltage and TFT polymer hole mobility is identified and discussed, in combination with thin-film morphological characteristics, to explain the observed OTFT performance trends.
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收藏
页码:7670 / 7685
页数:16
相关论文
共 122 条
  • [21] Synthesis, light emission, nanoaggregation, and restricted intramolecular rotation of 1,1-substituted 2,3,4,5-tetraphenylsiloles
    Chen, JW
    Law, CCW
    Lam, JWY
    Dong, YP
    Lo, SMF
    Williams, ID
    Zhu, DB
    Tang, BZ
    [J]. CHEMISTRY OF MATERIALS, 2003, 15 (07) : 1535 - 1546
  • [22] REGIOCONTROLLED SYNTHESIS OF POLY(3-ALKYLTHIOPHENES) MEDIATED BY RIEKE ZINC - THEIR CHARACTERIZATION AND SOLID-STATE PROPERTIES
    CHEN, TA
    WU, XM
    RIEKE, RD
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1995, 117 (01) : 233 - 244
  • [23] CHEN W, 1997, THESIS IOWA STATE U
  • [24] General observation of n-type field-effect behaviour in organic semiconductors
    Chua, LL
    Zaumseil, J
    Chang, JF
    Ou, ECW
    Ho, PKH
    Sirringhaus, H
    Friend, RH
    [J]. NATURE, 2005, 434 (7030) : 194 - 199
  • [25] Field effect transport measurements on single grains of sexithiophene: Role of the contacts
    Chwang, AB
    Frisbie, CD
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (51) : 12202 - 12209
  • [26] Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices
    deLeeuw, DM
    Simenon, MMJ
    Brown, AR
    Einerhand, REF
    [J]. SYNTHETIC METALS, 1997, 87 (01) : 53 - 59
  • [27] High carrier mobility polythiophene thin films: Structure determination by experiment and theory
    DeLongchamp, Dean M.
    Kline, R. Joseph
    Lin, Eric K.
    Fischer, Daniel A.
    Richter, Lee J.
    Lucas, Leah A.
    Heeney, Martin
    McCulloch, Iain
    Northrup, John E.
    [J]. ADVANCED MATERIALS, 2007, 19 (06) : 833 - +
  • [28] Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
  • [29] 2-9
  • [30] Building blocks for N-type molecular and polymeric electronics.: Perfluoroalkyl- versus alkyl-functionalized ligothiophenes (nTs; n=2-6).: Systematic synthesis, spectroscopy, electrochemistry, and solid-state organization
    Facchetti, A
    Yoon, MH
    Stern, CL
    Hutchison, GR
    Ratner, MA
    Marks, TJ
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (41) : 13480 - 13501