High-excitation and high-resolution photoluminescence spectra of bulk AlN

被引：150

作者：

Feneberg, Martin ^{[1
]}

Leute, Robert A. R. ^{[1
]}

Neuschl, Benjamin ^{[1
]}

Thonke, Klaus ^{[1
]}

Bickermann, Matthias ^{[2
]}

机构：

[1] Univ Ulm, Inst Quantenmat, Grp Halbleiterphys, D-89069 Ulm, Germany

[2] Univ Erlangen Nurnberg, Inst Werkstoffwissensch, D-91058 Erlangen, Germany

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 07期

关键词：

BAND-EDGE PHOTOLUMINESCENCE; QUANTUM-WELL LASER; SI-DOPED ALN; SINGLE-CRYSTALS; EXCITED GAN; THIN-FILMS; EPILAYERS; LAYERS; CATHODOLUMINESCENCE; LUMINESCENCE;

D O I：

10.1103/PhysRevB.82.075208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence spectra of high-quality bulk AlN crystals are reported. In addition to the expected linear luminescence features like free excitons and donor-bound excitons, nonlinear processes like biexcitons and the exciton-exciton scattering band are seen for higher excitation densities. For temperatures above approximate to 150 K the electron-hole plasma becomes clearly visible in the spectra. A detailed analysis of the data yields an exciton binding energy of 55 meV, a biexciton binding energy of 28.5 meV, a band gap of 6.089 eV at low temperature, and a band gap of 6.015 eV at room temperature.

引用

页数：8

共 38 条

[1] UV transparent single-crystalline bulk AlN substrates [J].

Bickermann, Matthias ;

Epelbaum, Boris M. ;

Filip, Octavian ;

Heimann, Paul ;

Nagata, Shunro ;

Winnacker, Albrecht .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, 2010, 7 (01) :21-24

[2] Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures [J].

Bidnyk, S ;

Lam, JB ;

Little, BD ;

Kwon, YH ;

Song, JJ ;

Bulman, GE ;

Kong, HS ;

Schmidt, TJ .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :3905-3907

[3] Near-threshold gain mechanisms in GaN thin films in the temperature range of 20-700 K [J].

Bidnyk, S ;

Schmidt, TJ ;

Little, BD ;

Song, JJ .

APPLIED PHYSICS LETTERS, 1999, 74 (01) :1-3

[4] Band-edge exciton states in AlN single crystals and epitaxial layers [J].

Chen, L ;

Skromme, BJ ;

Dalmau, RF ;

Schlesser, R ;

Sitar, Z ;

Chen, C ;

Sun, W ;

Yang, J ;

Khan, MA ;

Nakarmi, ML ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2004, 85 (19) :4334-4336

[5] Approaches to seeded PVT growth of AIN crystals [J].

Epelbaum, B. M. ;

Bickermann, M. ;

Winnacker, A. .

JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :E479-E484

[6]

Holst JC, 1997, MRS INTERNET J N S R, V2, part. no.

[7] Impact of strain on free-exciton resonance energies in wurtzite AlN [J].

Ikeda, Hirokatsu ;

Okamura, Takahiro ;

Matsukawa, Kodai ;

Sota, Takayuki ;

Sugawara, Mariko ;

Hoshi, Takuya ;

Cantu, Pablo ;

Sharma, Rajat ;

Kaeding, John F. ;

Keller, Stacia ;

Mishra, Umesh K. ;

Kosaka, Kei ;

Asai, Keiichiro ;

Sumiya, Shigeaki ;

Shibata, Tomohiko ;

Tanaka, Mitsuhiro ;

Speck, James S. ;

DenBaars, Steven P. ;

Nakamura, Shuji ;

Koyama, Takahiro ;

Onuma, Takeyoshi ;

Chichibu, Shigefusa F. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)

[8] Many-body theory for luminescence spectra in high-density electron-hole systems [J].

Inagaki, TJ ;

Aihara, M .

PHYSICAL REVIEW B, 2002, 65 (20) :1-13

[9] Dynamic behavior of hot-electron-hole plasma in highly excited GaN epilayers [J].

Jursenas, S ;

Kurilcik, G ;

Tamulaitis, G ;

Zukauskas, A ;

Gaska, R ;

Shur, MS ;

Khan, MA ;

Yang, JW .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2388-2390

[10] Ultraviolet semiconductor laser diodes on bulk AlN [J].

Kneissl, Michael ;

Yang, Zhihong ;

Teepe, Mark ;

Knollenberg, Cliff ;

Schmidt, Oliver ;

Kiesel, Peter ;

Johnson, Noble M. ;

Schujman, Sandra ;

Schowalter, Leo J. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)

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