Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

被引：38

作者：

Reuter, R ^{[1
]}

Agethen, M ^{[1
]}

Auer, U ^{[1
]}

vanWaasen, S ^{[1
]}

Peters, D ^{[1
]}

Brockerhoff, W ^{[1
]}

Tegude, FJ ^{[1
]}

机构：

[1] NOKIA MOBILE PHONES, D-44718 BOCHUM, GERMANY

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1997年 / 45卷 / 06期

关键词：

modeling; MODFET's; noise; shot noise;

D O I：

10.1109/22.588612

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new small-signal and noise-equivalent circuit for heterostructure field-effect transistors (HFET's), including the influence of impact-ionization and gate-leakage current on the electronic properties, is presented, The capability of the new model is demonstrated by bias-dependent investigations of the high-frequency (HF) (45 MHz up to 40 GHz) and noise behavior (2 GHz up to 18 GHz) of the InAlAs/InGaAs/InP HFET, Furthermore, based on these results, the bias-dependence of the newly implemented small-signal equivalent elements and the equivalent intrinsic noise sources, are discussed.

引用

页码：977 / 983

页数：7

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