Carrier removal in p-type InP

被引：11

作者：

Messenger, SR ^{[2
]}

Walters, RJ

Xapsos, MA

Summers, GP

Burke, EA

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] SFA Inc, Largo, MD 20774 USA

[3] Univ Maryland Baltimore Cty, Dept Phys, Baltimore, MD USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 06期

关键词：

D O I：

10.1109/23.736539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron and proton carrier removal rates due to 1 MeV electrons, 3 and 10 MeV protons, and 2 MeV alpha particles in p-type InP are found to be linearly proportional to nonionizing energy loss and independent of the initial carrier concentration over the range from 10(16) to 4 x 10(17) cm(-3).

引用

页码：2857 / 2860

页数：4

共 16 条

[1]

CHAFFIN RJ, 1973, MICROWAVE SEMICONDUC

[2]

LANDIS D, 1968, RAD EFFECTS SEMICOND

[3]

MESSENGER, 1994, P 1 WORLD C PHOT EN, P2153

[4]

Messenger G.C., 1992, The Effects of Radiation on Electronic Systems, Vsecond