Lateral current crowding in deep UV light emitting diodes over sapphire substrates

被引：53

作者：

Shatalov, M ^{[1
]}

Simin, G ^{[1
]}

Adivarahan, V ^{[1
]}

Chitnis, A ^{[1
]}

Wu, S ^{[1
]}

Pachipulusu, R ^{[1
]}

Mandavilli, V ^{[1
]}

Simin, K ^{[1
]}

Zhang, JP ^{[1
]}

Yang, JW ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 08期

关键词：

current crowding; quaternary; AlInGaN; UV LED;

D O I：

10.1143/JJAP.41.5083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a study of current crowding in AlInGaN multiple quantum well based deep ultra-violet light emitting diodes. For lateral geometry devices on sapphire substrates, our study concludes that the thickness and doping level of the high Al-content buffer and the cladding n-AlGaN layers is a key contributor to the lateral resistance and hence current crowding at the mesa edges. The inhomogeneous pumping of large area devices results in increased differential resistance causing a pronounced localized overheating. This degrades the device performance under high dc current operation. We also show stripe geometry to be a better choice for high power deep ultra-violet light emitting diodes on sapphire.

引用

页码：5083 / 5087

页数：5

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