Top-emitting 230 dots/in active-matrix polymer light-emitting diode displays on flexible metal foil substrates

被引：15

作者：

Chuang, Ta-Ko

Troccoli, Matias

Kuo, Po-Chin

Jamshidi-Roudbari, Abbas

Hatalis, Miltiadis K.

Biaggio, Ivan

Voutsas, Apostolos T.

机构：

[1] Lehigh Univ, Dept Elect & Comp Engn, Display Res Lab, Bethlehem, PA 18015 USA

[2] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

[3] Sharp Labs Amer Inc, LCD Proc Technol Lab, Camas, WA 98607 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期

关键词：

D O I：

10.1063/1.2722059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A top-emitting 230 dots/in. monochrome active-matrix polymer light-emitting diode (PLED) display having the VGA format and fabricated on a flexible steel foil utilizing the polycrystalline silicon thin-film transistor (TFT) technology is reported. The pixel circuitry architecture consists of the conventional two TFT circuitries made of two p-channel metal-oxide-semiconductor (PMOS) transistors and one storage capacitor. The average field-effect hole mobility and threshold voltage of the PMOS polysilicon TFTs fabricated on the metal foil are 37(+/- 4) cm(2)/V s and -1.9(+/- 0.6) V, respectively. The light turn-on voltage of the PLED is 4.0 V. (c) 2007 American Institute of Physics.

引用

页数：3

共 19 条

[1] Design and fabrication of high-performance polycrystalline silicon thin-film transistor circuits on flexible steel foils [J].