Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

被引：132

作者：

Stintz, A ^{[1
]}

Liu, GT ^{[1
]}

Li, H ^{[1
]}

Lester, LF ^{[1
]}

Malloy, KJ ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 06期

关键词：

1.3 mu m; low threshold current lasers; quantum dot lasers;

D O I：

10.1109/68.849053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The wavelength of InAs quantum dots in an In-0.15 Ga0.85As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-mu m. The quantum dot lasing wavelength is sensitive to growth conditions and sample thermal history resulting in blue shifts as much as 73 mn. The room temperature threshold current density is 42.6 A cm(-2) for 7.8-mm cavity length cleaved facet lasers under pulsed operation.

引用

页码：591 / 593

页数：3

共 9 条

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