Carrier profile for In0.35Ga0.65As/GaAs multiquantum well lasers from capacitance-voltage measurements

被引：12

作者：

Arias, J ^{[1
]}

Esquivias, I ^{[1
]}

Ralston, JD ^{[1
]}

Larkins, EC ^{[1
]}

Weisser, S ^{[1
]}

Rosenzweig, J ^{[1
]}

Schonfelder, A ^{[1
]}

Maier, M ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.115738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The carrier profile for MBE grown In0.35Ga0.65As/GaAs multiquantum well laser structures with nominally undoped and beryllium-doped active regions was determined by using the capacitance-voltage (C-V) technique at room temperature. A simple theoretical model was used to extract the impurity concentration and the quantum-well carrier density from the experimental profiles. We obtained a high carrier concentration in nominally undoped devices caused by a strong growth temperature dependent Be diffusion from the p-cladding layer, and no difference between doped samples with different nominal dopant location. (C) 1996 American Institute of Physics.

引用

页码：1138 / 1140

页数：3

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