Conformal ion implantation using pulsed plasma sources

被引：18

作者：

Adler, RJ ^{[1
]}

Richter-Sand, RJ ^{[1
]}

Clark, EJ ^{[1
]}

Gregg, CW ^{[1
]}

机构：

[1] N Star Res Corp, Albuquerque, NM 87109 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 02期

关键词：

D O I：

10.1116/1.590656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Operation of plasma implantation equipment at currents of several hundred amperes has been achieved with high density (10(11)-10(12)/cc) pulsed plasma sources. These currents have lead to inferred sheath dimensions in the 1-2 cm range. The equipment, results, and analysis are described here in detail. (C) 1999 American Vacuum Society. [S0734-211X(99)05202-6].

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收藏

页码：883 / 887

页数：5

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