Photoluminescence and its decay of the dye/porous-silicon composite system

被引:22
作者
Li, P
Li, QS
Ma, YR
Fang, RC
机构
[1] Department of Physics, Univ. of Sci. and Technol. of China, Hefei
关键词
D O I
10.1063/1.362752
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence (PL) and its decay in the composite system of dye/porous silicon, consisting of oxidized porous silicon (PSi) and impregnated dyes, have been studied. We find that the PL spectra of the dyes are similar to that of dyes in ethanol solution while being quite different from those of dye films absorbed on the surface of c-Si. The line shape of the spectra is more symmetric for impregnated dyes than that in solution. The PL decay of the impregnated dyes has been measured. The lifetime is about 100 ps for rhodamine B impregnated in as-prepared PSi and it becomes much shorter for that in the annealed PSi layers. The influence of absorbed dyes on the PL decay of PSi has also been measured. It shows that impregnated dyes provide new nonradiative processes for the deactivation of the excited PSi. (C) 1996 American Institute of Physics.
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收藏
页码:490 / 493
页数:4
相关论文
共 11 条
[1]   THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].
BRANDT, MS ;
FUCHS, HD ;
STUTZMANN, M ;
WEBER, J ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312
[2]   LASER-DYE IMPREGNATION OF OXIDIZED POROUS SILICON ON SILICON-WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1993, 63 (03) :337-339
[3]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[4]   PERTURBATION OF THE LUMINESCENT SILICON EMISSION BY ADSORBED DYES [J].
GORBOUNOVA, O ;
MEJIRITSKI, A ;
TORRES, A .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4643-4647
[5]   PHOTOINDUCED ELECTRON-TRANSFER FROM ADSORBED RHODAMINE-B TO OXIDE SEMICONDUCTOR SUBSTRATES INVACUO - SEMICONDUCTOR DEPENDENCE [J].
HASHIMOTO, K ;
HIRAMOTO, M ;
SAKATA, T .
CHEMICAL PHYSICS LETTERS, 1988, 148 (2-3) :215-220
[6]  
KOCH F, 1993, MAT RES S C, V283, P197, DOI 10.1557/PROC-283-197
[7]   TIME-DEPENDENCE AND OPTICAL QUENCHING OF PHOTOLUMINESCENCE IN POROUS SILICON [J].
LAIHO, R ;
PAVLOV, A ;
HOVI, O ;
TSUBOI, T .
APPLIED PHYSICS LETTERS, 1993, 63 (03) :275-277
[8]   FLUORESCENCE OF RHODAMINE-B ON SEMICONDUCTOR AND INSULATOR SURFACES - DEPENDENCE OF THE QUANTUM YIELD ON SURFACE COVERAGE [J].
LIANG, Y ;
MOY, PF ;
POOLE, JA ;
GONCALVES, AMP .
JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (12) :2451-2455
[9]  
SCHAFER FP, 1973, DYE LASERS, P18
[10]   POROUS SILICON FORMATION MECHANISMS [J].
SMITH, RL ;
COLLINS, SD .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) :R1-R22