TIME-DEPENDENCE AND OPTICAL QUENCHING OF PHOTOLUMINESCENCE IN POROUS SILICON

被引：24

作者：

LAIHO, R ^{[1
]}

PAVLOV, A ^{[1
]}

HOVI, O ^{[1
]}

TSUBOI, T ^{[1
]}

机构：

[1] KYOTO SANGYO UNIV,FAC ENGN,KAMIGAMO,KYOTO 603,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.110076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated time dependence and light-induced quenching of photoluminescence (PL) in porous Si samples. After excitation with a N2 laser pulse, a shift of the maximum of the emission band from 630 to 680 nm within a time interval of 3 < t < 100 mus was observed. A consistent description of the PL data is obtained by using a model based on three different electron-hole recombination processes in the sample. Measurements of light-induced quenching of PL show great similarities with fatigue of photocurrent in illuminated hydrogenated amorphous silicon.

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页码：275 / 277

页数：3

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