Fine-grained nanocrystalline silicon P-layer for high open circuit voltage a-Si:H solar cells

被引：2

作者：

Du, WH ^{[1
]}

Liao, XB ^{[1
]}

Yang, XS ^{[1
]}

Xiang, XB ^{[1
]}

Deng, XM ^{[1
]}

Sun, K ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488402

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Hydrogenated amorphous silicon (a-Si:H) single-junction solar cells with high open circuit voltage (V,,) are fabricated using a wide bandgap boron doped Si:H player deposited at high hydrogen dilution, low substrate temperature and with H-2-Plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by Raman scattering spectroscopy and High Resolution Transmission Electron Microscope (HRTEM). It is found that the p-layer that leads to high V-oc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix.

引用

页码：1401 / 1403

页数：3

共 7 条

[1]

DENG X, 2002, NDJ23063008

[2] ENHANCEMENT OF OPEN CIRCUIT VOLTAGE IN HIGH-EFFICIENCY AMORPHOUS-SILICON ALLOY SOLAR-CELLS [J].