Electrically active defect centers induced by Ga+ focused ion beam irradiation of GaAs(100)

被引：8

作者：

Brown, SJ ^{[1
]}

Rose, PD ^{[1
]}

Jones, GAC ^{[1
]}

Linfield, EH ^{[1
]}

Ritchie, DA ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.123150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic nature of defect centers induced by 30 keV Ga+ focused ion beam irradiation of GaAs(100) has been studied in situ by scanning tunneling spectroscopy (STS). The defect centers were identified as electron traps lying below the surface state conduction band, each with an active area of approximately 20 nm(2). An areal ion beam dose of 1 x 10(13) cm(-2) was sufficiently low that no significant surface sputtering was observed by topographic imaging which suggests that the features. observed by STS are not related to gross physical damage. Spatial STS measurements also allow a lateral profile of a focused ion beam patterned line to be determined accurately, thereby setting a resolution limit on the direct write technique for nanoscale lithography. (C) 1999 American Institute of Physics. [S0003-6951(99)04904-9].

引用

页码：576 / 578

页数：3

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