Growth and characterization of ZnO films on (001), (100) and (010) LiGaO2 substrates

被引：31

作者：

Huang, Taohua ^{[1
,2
]}

Zhou, Shengming ^{[1
]}

Teng, Hao ^{[1
,2
]}

Lin, Hui ^{[1
,2
]}

Wang, Jun ^{[1
]}

Han, Ping ^{[3
]}

Zhang, Rong ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

[3] Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 13期

基金：

中国国家自然科学基金;

关键词：

atomic force microscopy; X-ray diffraction; LiGaO2; substrate; ZnO films;

D O I：

10.1016/j.jcrysgro.2008.03.037

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO films were fabricated on LiGaO2 (0 0 1), (10 0) and (0 10) planes by RF magnetron sputtering. The structural, morphological and optical properties of as-grown ZnO films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. It is found that the orientation of ZnO films is strongly dependent on the substrate plane. [0 0 0 11, [1 (1) over bar 00] and [11 (2) over bar0] oriented ZnO films are deposited on LiGaO2 (001), (100) and (010), respectively. AFM shows the (0001) ZnO film consists of well-aligned regular hexagonal grains. Raman spectra reveal a tensile stress in the (0 0 0 1) ZnO film and a compressive stress in (110 0) and (112 0) ZnO films. PL spectra of all ZnO films exhibit only a near-band-edge UV emission peak. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：3144 / 3148

页数：5

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