Quantum transport in a Schottky in-plane-gate controlled GaAs/AlGaAs quantum well wires

被引：13

作者：

Hashizume, T ^{[1
]}

Okada, H ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,GRAD SCH ELECT & INFORMAT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

来源：

PHYSICA B | 1996年 / 227卷 / 1-4期

关键词：

quantum well wire; Schottky in-plane gate; quantized conductance; one-dimensional electron waveguides;

D O I：

10.1016/0921-4526(96)00328-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transport properties of a novel GaAs/AlGaAs quantum well wires (QWWs) with Schottky in-plane gates were investigated. The QWW was realized by a combination of a electron beam lithography and the in situ electrochemical technology. Clear quantized conductance in units of 2e(2)/h was observed up to 100 Ii. Nonlinearities are found in the current-voltage characteristics at a small applied voltage, resulting in conductance deviation from the value of the quantized conductance. From the breakdown voltage of conductance quantization, a subband energy separation is estimated to be 10 meV or higher.

引用

页码：42 / 45

页数：4

共 14 条

[1] TEMPERATURE LIMITS FOR BALLISTIC QUANTIZATION IN A GAAS/ALGAAS ONE-DIMENSIONAL CONSTRICTION [J].

FROST, JEF ;

SIMMONS, MY ;

PEPPER, M ;

CHURCHILL, AC ;

RITCHIE, DA ;

JONES, GAC .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (44) :L559-L564

[2] FABRICATION AND CHARACTERIZATION OF QUANTUM-WIRE TRANSISTORS WITH SCHOTTKY INPLANE GATES FORMED BY AN IN-SITU ELECTROCHEMICAL PROCESS [J].

HASEGAWA, H ;

HASHIZUME, T ;

OKADA, H ;

JINUSHI, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1744-1750

[3] DEEP LEVEL CHARACTERIZATION OF SUBMILLIMETER-WAVE GAAS SCHOTTKY DIODES PRODUCED BY A NOVEL INSITU ELECTROCHEMICAL PROCESS [J].

HASHIZUME, T ;

HASEGAWA, H ;

SAWADA, T ;

GRUB, A ;

HARTNAGEL, HL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B) :486-490

[4] NOVEL IN-SITU ELECTROCHEMICAL TECHNOLOGY FOR FORMATION OF OXIDE-FREE AND DEFECT-FREE SCHOTTKY CONTACT TO GAAS AND RELATED LOW-DIMENSIONAL STRUCTURES [J].

HASHIZUME, T ;

SCHWEEGER, G ;

WU, NJ ;

HASEGAWA, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2660-2666

[5] OBSERVATION OF CONDUCTANCE QUANTIZATION IN A NOVEL SCHOTTKY INPLANE GATE WIRE TRANSISTOR FABRICATED BY LOW-DAMAGE IN-SITU ELECTROCHEMICAL PROCESS [J].

HASHIZUME, T ;

OKADA, H ;

JINUSHI, K ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (5B) :L635-L638

[6] NONLINEAR CONDUCTANCE OF QUANTUM POINT CONTACTS [J].

KOUWENHOVEN, LP ;

VANWEES, BJ ;

HARMANS, CJPM ;

WILLIAMSON, JG ;

VANHOUTEN, H ;

BEENAKKER, CWJ ;

FOXON, CT ;

HARRIS, JJ .

PHYSICAL REVIEW B, 1989, 39 (11) :8040-8043

[7] CONDUCTANCE OF QUANTUM POINT CONTACTS CALCULATED USING REALISTIC POTENTIALS [J].

NIXON, JA ;

DAVIES, JH ;

BARANGER, HU .

SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (02) :187-190

[8] NOVEL WIRE TRANSISTOR STRUCTURE WITH INPLANE GATE USING DIRECT SCHOTTKY CONTACTS TO 2DEG [J].

OKADA, H ;

JINUSHI, K ;

WU, NJ ;

HASHIZUME, T ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :1315-1319

[9] Transport characterization of Schottky in-plane gate Al0.3Ga0.7As/GaAs quantum wire transistors realized by in-situ electrochemical process [J].

Okada, H ;

Hashizume, T ;

Hasegawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B) :6971-6976

[10] EFFECTS OF THE CONSTRICTION GEOMETRY ON QUASI-ONE-DIMENSIONAL TRANSPORT - ADIABATIC EVOLUTION AND RESONANT TUNNELING [J].

TEKMAN, E ;

CIRACI, S .

PHYSICAL REVIEW B, 1989, 40 (12) :8559-8562

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