OBSERVATION OF CONDUCTANCE QUANTIZATION IN A NOVEL SCHOTTKY INPLANE GATE WIRE TRANSISTOR FABRICATED BY LOW-DAMAGE IN-SITU ELECTROCHEMICAL PROCESS

被引：19

作者：

HASHIZUME, T ^{[1
]}

OKADA, H ^{[1
]}

JINUSHI, K ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 5B期

关键词：

QUANTIZED CONDUCTANCE; SCHOTTKY INPLANE GATE; BALLISTIC TRANSPORT; ELECTROCHEMICAL PROCESS;

D O I：

10.1143/JJAP.34.L635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

novel Schottky in-plane gate (IPG) quantum wire transistor has been successfully fabricated for the first time on a GaAs/AlGaAs quantum-well (QW) wafer, using a low-damage in situ electrochemical process. In comparison with previous IPG transistors of insulated-gate type, the present Schottky IPG device exhibited much better gate control of drain currents. In spite of large device dimensions of several hundred nanometers, sharp quantized conductance steps in units of 2e(2)/h were observed up to 40 K as a result of the inherent strong electron confinement capability of the present IPG structure.

引用

页码：L635 / L638

页数：4

共 25 条

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