DEEP LEVEL CHARACTERIZATION OF SUBMILLIMETER-WAVE GAAS SCHOTTKY DIODES PRODUCED BY A NOVEL INSITU ELECTROCHEMICAL PROCESS

被引：23

作者：

HASHIZUME, T

HASEGAWA, H

SAWADA, T

GRUB, A

HARTNAGEL, HL

机构：

[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN

[2] TH DARMSTADT,INST HOCHFREQUENZTECH,W-6100 DARMSTADT,GERMANY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

DEEP LEVEL; EXCESS NOISE; SCHOTTKY DIODES; SURFACE TREATMENT; ELECTROCHEMICAL TECHNIQUE; ANODIC PULSE ETCHING; E-BEAM; DLTS;

D O I：

10.1143/JJAP.32.486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Various preparation methods used for the fabrication of submillimeter-wave Pt/GaAs Schottky diodes are compared with respect to deep levels present in the diode surface region. In the samples prepared by the standard electron-beam evaporation process, three process-induced deep levels were detected with the concentrations in the range of 10(13)-10(14) cm-3. On the other hand, these levels were very much reduced in the diodes produced by a new in-situ electrochemical technique. This appears to be related to the reported very low noise property of the latter diodes.

引用

页码：486 / 490

页数：5

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