VARIATION OF DEEP ELECTRON TRAPS CREATED BY GAMMA-IRRADIATION OF GAAS

被引：21

作者：

HASHIZUME, T ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC ENGN,KITA KU,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 09期

关键词：

D O I：

10.1063/1.346168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of γ irradiation on deep electron states in liquid encapsulated Czochralski (LEC) grown GaAs has been investigated by deep-level transient spectroscopy (DLTS) and photocapacitance measurements. With γ rays of 2×108 R, EL6 was reduced in concentration by a factor of 3-5, whereas EL3 was increased about one order of magnitude, as compared with those in as-grown material. In addition to E traps that were previously reported in electron-irradiated material, two new traps were observed near the surface region. From their concentration profiles and annealing behavior, the new traps were most likely created by the interaction of the primary irradiation-induced defects with the grown-in defects. In contrast to these results, neither the DLTS spectrum nor the metastable behavior of EL2 was affected by γ irradiation.

引用

页码：4598 / 4603

页数：6

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