DEEP ELECTRON TRAPS IN UNDOPED GAAS GROWN BY MOCVD

被引：14

作者：

HASHIZUME, T ^{[1
]}

IKEDA, E ^{[1
]}

AKATSU, Y ^{[1
]}

OHNO, H ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 05期

关键词：

D O I：

10.1143/JJAP.23.L296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L296 / L298

页数：3

共 9 条

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[6] DEEP ELECTRON TRAPS IN ORGANOMETALLIC VAPOR-PHASE GROWN ALXGA1-XAS [J].

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[7] ASH3 TO GA(CH3)3 MOLE RATIO DEPENDENCE OF DOMINANT DEEP LEVELS IN MOCVD GAAS [J].

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[8] DEEP LEVELS IN MOCVD GAAS GROWN UNDER DIFFERENT GA-AS MOL FRACTIONS [J].

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[9] ON THE DETERMINATION OF THE SPATIAL-DISTRIBUTION OF DEEP CENTERS IN SEMICONDUCTING THIN-FILMS FROM CAPACITANCE TRANSIENT SPECTROSCOPY [J].

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