NOVEL WIRE TRANSISTOR STRUCTURE WITH INPLANE GATE USING DIRECT SCHOTTKY CONTACTS TO 2DEG

被引：29

作者：

OKADA, H ^{[1
]}

JINUSHI, K ^{[1
]}

WU, NJ ^{[1
]}

HASHIZUME, T ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

INPLANE GATE; SCHOTTKY CONTACT; ALGAAS/GAAS; QUANTUM WIRE; 2DEG; ELECTROCHEMICAL PROCESS;

D O I：

10.1143/JJAP.34.1315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel wire transistor structure with Schottky in-plane gates (IPG) to the AlGaAs/GaAs quantum well (QW) has been successfully fabricated and characterized. An in situ selective electrochemical process is utilized to form direct Schottky contacts to the edge of the QW. Details of the novel process for transistor fabrication, as well as field-effect characteristics of the novel device, are resented and discussed. Field-effect transistor (FET) characteristics with excellent gate control and clear pinch-off are obtained at room temperature and they are compared with a theory newly developed for the IPG FET.

引用

页码：1315 / 1319

页数：5

共 14 条

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