Growth of high-uniformity InAs/GaAs quantum dots with ultralow density below 107 cm-2 and emission above 1.3 μm

被引：15

作者：

Guimard, Denis ^{[1
]}

Lee, Hearin ^{[1
]}

Nishioka, Masao ^{[1
]}

Arakawa, Yasuhiko ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 16期

关键词：

D O I：

10.1063/1.2913159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of high-uniformity large coherent InAs/GaAs quantum dots (QDs) by metal organic chemical vapor deposition, with density between 10(6) and 10(10) cm(-2), emission close to 1.4 mu m at room temperature with only GaAs capping, and temperature-independent peak linewidth as low as 14 meV. It is shown that the QD density can be controlled by the InAs coverage, while the QD size remains remarkably constant. The observed decrease of the emission wavelength with coverage is explained by a density-dependent alloying. Microphotoluminescence measurement was performed on bare samples at 5 K and single dot emission was observed. (c) 2008 American Institute of Physics.

引用

页数：3

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