Charged exciton emission at 1.3 μm from single InAs quantum dots grown by metalorganic chemical vapor deposition -: art. no. 172101

被引：17

作者：

Cade, NI ^{[1
]}

Gotoh, H

Kamada, H

Tawara, T

Sogawa, T

Nakano, H

Okamoto, H

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 17期

关键词：

D O I：

10.1063/1.2093927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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