Growth and characterization of single quantum dots emitting at 1300 nm

被引：148

作者：

Alloing, B ^{[1
]}

Zinoni, C

Zwiller, V

Li, LH

Monat, C

Gobet, M

Buchs, G

Fiore, A

Pelucchi, E

Kapon, E

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, Quantum Devices Grp, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, Lab Nanostruct, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 10期

关键词：

D O I：

10.1063/1.1872213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have optimized the molecular-beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 ML/s, to reduce the density to 2 dots/mu m(2) and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at-low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, InAs/GaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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