Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

被引：40

作者：

Joyce, PB

Krzyzewski, TJ

Bell, GR

Jones, TS ^{[1
]}

Malik, S

Childs, D

Murray, R

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, Ctr Elect Mat & Devices, London SW7 2AY, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Ctr Elect Mat & Devices, London SW 2BZ, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

surfaces; surface processes; molecular beam epitaxy; arsenates; semiconducting IIIV materials;

D O I：

10.1016/S0022-0248(01)00967-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of the InAs deposition rate on the properties of InAs/GaAs quantum dots (QDs) grown on GaAs (0 0 1) substrates by molecular beam epitaxy has been studied by scanning tunnelling microscopy (STM) and photoluminescence (PL). PL studies performed on GaAs capped QD samples show that the emission wavelength increases with decreasing growth rate, reaching a maximum around 1.3 mum, with the linewidth decreasing from 44 to 27 meV. STM studies on uncapped dots show that the number density, total QD volume and size fluctuation all decrease significantly as the growth rate is reduced. The observed shifts in the emission wavelength and linewidth are attributed to changes in the QD size, size distribution and composition. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：1000 / 1004

页数：5

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