Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well

被引：27

作者：

Kaiser, S ^{[1
]}

Mensing, T ^{[1
]}

Worschech, L ^{[1
]}

Klopf, F ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1529315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown self-assembled InAs quantum dots embedded in the center of an InGaAs quantum well by molecular-beam epitaxy. Using electron-beam lithography and wet etching techniques, small mesas with only a few quantum dots were fabricated. At room temperature, the quantum dots have an emission wavelength of 1.3 mum. By photoluminescence spectroscopy at low temperatures, we observe the emission lines of excitons and biexcitons in single-dot structures. The assignment of exciton and biexciton recombination is based on the characteristic excitation intensity dependence of these states. A biexciton binding energy of about 3.5 meV is obtained for the present dots. (C) 2002 American Institute of Physics.

引用

收藏

页码：4898 / 4900

页数：3

相关论文

共 18 条

[1] Biexciton versus exciton lifetime in a single semiconductor quantum dot [J].

Bacher, G ;

Weigand, R ;

Seufert, J ;

Kulakovskii, VD ;

Gippius, NA ;

Forchel, A ;

Leonardi, K ;

Hommel, D .

PHYSICAL REVIEW LETTERS, 1999, 83 (21) :4417-4420

[2] Strong variation of the exciton g factors in self-assembled In0.60Ga0.40As quantum dots [J].

Bayer, M ;

Kuther, A ;

Schäfer, F ;

Reithmaier, JP ;

Forchel, A .

PHYSICAL REVIEW B, 1999, 60 (12) :R8481-R8484

[3] Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm [J].

Bloch, J ;

Shah, J ;

Pfeiffer, LN ;

West, KW ;

Chu, SNG .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2545-2547

[4] SHARP-LINE PHOTOLUMINESCENCE AND 2-PHOTON ABSORPTION OF ZERO-DIMENSIONAL BIEXCITONS IN A GAAS/ALGAAS STRUCTURE [J].

BRUNNER, K ;

ABSTREITER, G ;

BOHM, G ;

TRANKLE, G ;

WEIMANN, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (08) :1138-1141

[5] Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm [J].

Fiore, A ;

Borri, P ;

Langbein, W ;

Hvam, JM ;

Oesterle, U ;

Houdré, R ;

Stanley, RP ;

Ilegems, M .

APPLIED PHYSICS LETTERS, 2000, 76 (23) :3430-3432

[6] Optical spectroscopy of a single Al0.36In0.64As/Al0.33Ga0.67As quantum dot -: art. no. 075314 [J].

Hinzer, K ;

Hawrylak, P ;

Korkusinski, M ;

Fafard, S ;

Bayer, M ;

Stern, O ;

Gorbunov, A ;

Forchel, A .

PHYSICAL REVIEW B, 2001, 63 (07)

[7] BIEXCITONS IN SEMICONDUCTOR QUANTUM DOTS [J].

HU, YZ ;

KOCH, SW ;

LINDBERG, M ;

PEYGHAMBARIAN, N ;

POLLOCK, EL ;

ABRAHAM, FF .

PHYSICAL REVIEW LETTERS, 1990, 64 (15) :1805-1807

[8] Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots [J].

Huffaker, DL ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1998, 73 (04) :520-522

[9] Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers [J].

Klopf, F ;

Reithmaier, JP ;

Forchel, A .

APPLIED PHYSICS LETTERS, 2000, 77 (10) :1419-1421

[10] Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm [J].

Krishna, S ;

Zhu, D ;

Xu, J ;

Linder, KK ;

Qasaimeh, O ;

Bhattacharya, P ;

Huffaker, DL .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6135-6138