Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix

被引：23

作者：

Liu, WS ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 02期

关键词：

D O I：

10.1063/1.1829147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs quantum dots (QDs) in various matrices, such as InAlAs, InGaAs, InAlAs/InGaAs, and InGaAs/InAlAs, are prepared to clarify how the overgrown layers affect their optical properties. It is shown that strain reduction mechanism dominates the emission wavelength extension when the thickness of the overgrown layer is thin. The relaxation of compressive strain at the QD bottom by InAlAs overgrown layer cannot only extend the QD emission wavelength but also narrow the spectral linewidth and increase the state separation between the ground state and the first excited state. (C) 2005 American Institute of Physics.

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